features marking: 1 h igh diode semiconductor sot- 23 ?? ? symbol parameter value unit v collector-base voltage 300 v v ce o collector-emitter voltage v v eb o emitter-base voltage 5 v i c co llector current p c co llector power dissipation 350 mw r j a thermal resistance from junction to ambient 357 /w t j jun ction temperature 150 t st g storage temperature -55 +150 electrical characteristics (ta =25 unless otherwise specified 1d sot -23 plastic-encap sulate transistors transistor( np n ) 500 ma e b c cbo mmbta4 2 300 high breakdown voltage low collector-emitter saturation voltage complementary to mmbta92 (pnp) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = 100 a,i e =0 300 v collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b =0 300 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb =200v, i e =0 0.25 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce = 10v, i c = 1ma 60 h fe(2) v ce = 10v, i c =10ma 100 200 dc current gain h fe(3) v ce =10v, i c =30ma 60 collector-emitter saturation voltage v ce (sat) i c =20ma, i b = 2ma 0.2 v base-emitter saturation voltage v be (sat) i c = 20ma, i b =2ma 0.9 v transition frequency f t v ce = 20v, i c = 10ma, f= 30mhz 50 mhz
h l j k ' l r g h 6 h p l f r q g x f w r u 7 \ s l f d o & k d u d f w h u l v w l f v 0 300 600 900 1200 0.1 1 10 100 0.1 1 10 100 10 100 0.1 1 10 100 300 600 900 0 25 50 75 100 125 150 0 100 200 300 400 0.1 1 10 100 10 100 0.1 1 10 100 10 100 1000 0.1 1 10 1 10 100 0246810121416182022 0 2 4 6 8 10 12 14 16 18 common emitter v ce =10v v be i c base-emmiter voltage v be (mv) collector current i c (ma) t a = 2 5 t a = 1 0 0 i c f t common emitter v ce =20v t a =25 collector current i c (ma) transition frequency f t (mhz) 300 =10 i c v besat base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c t a ambient temperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 =10 i c v cesat collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 500 i c h fe t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce =10v c ib f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib c ob reverse voltage v (v) capacitance c (pf) 20 common emitter t a =25 90ua i b =10ua collector current i c (ma) collector-emitter voltage v ce (v) i c v ce 20ua 30ua 40ua 50ua 60ua 70ua 80ua
jshd jshd h l j k ' l r g h 6 h p l f r q g x f w r u package outline dimensions sot-23 suggested pad layout sot-23
4 reel taping specifications for surface mount devices-sot-23 h igh diode semiconductor 30
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